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II
116TH CONGRESS
2D SESSION
S. 4130
To require the Secretary of Commerce to award grants to States for the
construction of microelectronics manufacturing and advanced research
and development facilities, to authorize the Secretary of Defense and
the Director of National Intelligence to fund the construction of micro-
electronics manufacturing facilities for national security needs, and to
authorize additional amounts for microelectronics research and develop-
ment, and for other purposes.
IN THE SENATE OF THE UNITED STATES
JULY 1, 2020
Mr. COTTON (for himself, Mr. SCHUMER, Mr. REED, Mr. RISCH, Ms. COL-
LINS, Mr. KING, Mr. HAWLEY, Mr. JONES, Mrs. GILLIBRAND, Mr.
RUBIO, and Ms. HASSAN) introduced the following bill; which was read
twice and referred to the Committee on Commerce, Science, and Trans-
portation
A BILL
To require the Secretary of Commerce to award grants to
States for the construction of microelectronics manufac-
turing and advanced research and development facilities,
to authorize the Secretary of Defense and the Director
of National Intelligence to fund the construction of
microelectronics manufacturing facilities for national se-
curity needs, and to authorize additional amounts for
microelectronics research and development, and for other
purposes.
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•S 4130 IS
Be it enacted by the Senate and House of Representa-
1
tives of the United States of America in Congress assembled,
2
SECTION 1. SHORT TITLE.
3
This Act may be cited as the ‘‘American Foundries
4
Act of 2020’’.
5
SEC. 2. GRANTS FOR CONSTRUCTION OF MICROELEC-
6
TRONICS MANUFACTURING AND RESEARCH
7
AND DEVELOPMENT FACILITIES, AND WORK-
8
FORCE DEVELOPMENT.
9
(a) GRANTS FOR STATES WITH DEMONSTRATED IN-
10
TEREST IN CONSTRUCTING MICROELECTRONICS MANU-
11
FACTURING AND ADVANCED RESEARCH AND DEVELOP-
12
MENT FACILITIES.—
13
(1) IN
GENERAL.—Not later than 180 days
14
after the date of the enactment of this Act, the Sec-
15
retary of Commerce, in consultation with the Sec-
16
retary of Defense, shall commence carrying out a
17
program on the award of grants to States described
18
in paragraph (2) to assist in financing the construc-
19
tion, expansion, or modernization (including acquisi-
20
tion of equipment and intellectual property) of
21
microelectronics fabrication, assembly, test, ad-
22
vanced packaging, or advanced research and develop-
23
ment facilities.
24
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•S 4130 IS
(2) STATES DESCRIBED.—A State described in
1
this paragraph is a State that demonstrates to the
2
Secretary of Commerce the following:
3
(A) Documented interest from a microelec-
4
tronics company, that has a demonstrated abil-
5
ity to build and operate microelectronics fab-
6
rication, assembly, test, advanced packaging, or
7
advanced research and development facilities, in
8
constructing, expanding, or modernizing a com-
9
mercial microelectronics fabrication, assembly,
10
test, advanced packaging, or advanced research
11
and develop facility, or documented interest
12
from a public-private consortium that has a
13
demonstrated ability to build and operate an
14
advanced research and development facility in
15
the State.
16
(B) Documented interest from a private
17
entity to provide funding to support the con-
18
struction, expansion, or modernization of the
19
facility that is the subject of the interest docu-
20
mented under subparagraph (A).
21
(C) Commitments from such microelec-
22
tronics company or consortia to worker and
23
community investment, including—
24
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•S 4130 IS
(i) training and education benefits
1
paid for by the company; and
2
(ii) programs to expand employment
3
opportunity for economically disadvantaged
4
individuals.
5
(D) Commitments from regional edu-
6
cational and training entities and institutions of
7
higher education to develop curriculum or en-
8
gage in workforce training, including program-
9
ming for training and job placement of eco-
10
nomically disadvantaged individuals.
11
(E) Guaranteed State-level economic incen-
12
tives for the construction, expansion, or mod-
13
ernization of the facility described in subpara-
14
graph (B), such as site development, tax incen-
15
tives, job-training programs and State-level
16
funding for microelectronics research and devel-
17
opment.
18
(3) LIMITATION ON GRANT AMOUNT.—A State
19
may not be awarded more than $3,000,000,000
20
under paragraph (1).
21
(4) USE OF FUNDS.—
22
(A) IN
GENERAL.—A State receiving a
23
grant under paragraph (1) may only use the
24
amount of the grant to finance—
25
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•S 4130 IS
(i) the construction, expansion, or
1
modernization of a state-of-the-art micro-
2
electronics fabrication, assembly, test, ad-
3
vanced packaging, or advanced research
4
and development facility with respect to
5
which the State demonstrated to the Sec-
6
retary documented interest under para-
7
graph (2), or for similar uses in state of
8
practice and legacy facilities as deemed
9
necessary by the Secretary for national se-
10
curity and economic competitiveness;
11
(ii) to support workforce development
12
for such facility; or
13
(iii) to support site development for
14
such facility.
15
(B) RETURN OF FUNDS.—A State awarded
16
a grant under paragraph (1) shall return any
17
unused funds to the Treasury of the United
18
States on an agreed-upon timeframe determined
19
by the Secretary prior to issuing the funds.
20
(C) RECOVERY OF CERTAIN FUNDS.—If a
21
microelectronics entity receiving grant funds
22
under this subsection engages in increased lev-
23
els of joint research and development, tech-
24
nology licensing or transfer, or investment in-
25
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•S 4130 IS
volving sensitive technologies with entities
1
under the foreign ownership, control, or influ-
2
ence (FOCI) of the Government of the People’s
3
Republic of China or other foreign adversary
4
during the period of the grant, as determined
5
by the Secretary as part of a periodic review of
6
whether a microelectronics entity participating
7
in the program specified in this subsection is
8
under foreign ownership, control, or influence,
9
the Secretary shall recover the amounts pro-
10
vided by the Secretary under this subsection.
11
(5) PROHIBITION.—If pursuant to the periodic
12
review of foreign ownership, control, or influence
13
specified in paragraph (4)(C), the Secretary deter-
14
mines that a microelectronics entity is under the for-
15
eign ownership, control, or influence of the Govern-
16
ment of the People’s Republic of China or other for-
17
eign adversary during the period of the grant, such
18
entity shall be prohibited from participating in the
19
program specified in this subsection.
20
(6) NONRELOCATION BETWEEN STATES.—
21
(A) PROHIBITION.—A State may not use
22
any amount of a grant awarded under this sub-
23
section to induce the relocation or the move-
24
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•S 4130 IS
ment of existing jobs from one State to another
1
State in competition for those jobs.
2
(B) REMEDIES.—In the event that the
3
Secretary determines an amount of a grant
4
awarded to a State under this subsection was
5
used in violation of subparagraph (A), the Sec-
6
retary may pursue appropriate enforcement ac-
7
tions, including—
8
(i) suspension of disbursements of the
9
grant awarded; and
10
(ii) termination of the grant awarded,
11
which may include the establishment of a
12
debt requiring the recipient of the grant to
13
reimburse the amount of the grant.
14
(7) IMPLEMENTATION.—The Secretary shall
15
carry out this section acting through the Director of
16
the National Institute of Standards and Technology.
17
(8) REPORTS AND NOTICES.—
18
(A) SECRETARY OF COMMERCE.—
19
(i) REPORT
ON
IMPLEMENTATION
20
PLAN.—Not later than 90 days after the
21
date of the enactment of this Act, the Sec-
22
retary shall submit to Congress a report on
23
the plans of the Secretary to carry out the
24
program required by paragraph (1).
25
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•S 4130 IS
(ii) NOTICE OF PENDING AWARD.—
1
(I) IN GENERAL.—Not later than
2
30 days before awarding a grant to a
3
State under this subsection, the Sec-
4
retary shall submit to Congress a no-
5
tice of the intended award.
6
(II)
CONTENTS.—Each
notice
7
submitted under subclause (I) shall
8
include a description of the State to
9
which the Secretary intends to award
10
a grant under this subsection, the
11
project or projects for which the
12
amount of the grant is intended to be
13
used, specifics on the planned use of
14
the amounts of the grant for that
15
project, and the rationale of the Sec-
16
retary for awarding the grant.
17
(B) COMPTROLLER
GENERAL
OF
THE
18
UNITED STATES.—
19
(i) BIENNIAL
REPORT.—Not later
20
than 1 year after the date on which the
21
Secretary of Commerce submits the report
22
under subparagraph (A)(i) and not less
23
frequently than once every 2 years there-
24
after, the Comptroller General of the
25
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•S 4130 IS
United States shall submit to Congress a
1
report on the activities carried out under
2
this subsection during the previous year.
3
(ii) CONTENTS.—Each report sub-
4
mitted under clause (i) shall include, at a
5
minimum, assessments of the following:
6
(I) How the program is being
7
carried out and how recipients of
8
grants are being selected under the
9
program.
10
(II) How other Federal programs
11
are leveraged for manufacturing, re-
12
search, and training to complement
13
the grants awarded to States under
14
this subsection.
15
(III) Outcomes of projects sup-
16
ported by grants under this sub-
17
section, including the construction, ex-
18
pansion, or modernization of a micro-
19
electronics fabrication, assembly, test,
20
advanced packaging, or advanced re-
21
search and development facilities, re-
22
search and development, workforce
23
training, employment, wages, and hir-
24
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•S 4130 IS
ing of economically disadvantaged
1
populations.
2
(9) AUTHORIZATION
OF
APPROPRIATIONS.—
3
There is authorized to be appropriated to carry out
4
this subsection $15,000,000,000 for fiscal year
5
2021, with such amount to remain available for such
6
purpose until September 30, 2031.
7
(b) CREATION, EXPANSION, OR MODERNIZATION OF
8
MICROELECTRONICS MANUFACTURING FACILITIES
AND
9
CAPABILITIES FOR NATIONAL SECURITY NEEDS.—
10
(1) INCENTIVES AUTHORIZED.—The Secretary
11
of Defense and the Director of National Intelligence,
12
in consultation with the Secretary of Commerce,
13
may jointly enter into arrangements with private
14
sector entities or consortia thereof to provide incen-
15
tives for the creation, expansion, or modernization of
16
one or more commercially competitive and sustain-
17
able microelectronics manufacturing or advanced re-
18
search and development facilities capable of pro-
19
ducing measurably secure and specialized microelec-
20
tronics for use by the Department of Defense, the
21
intelligence community, critical infrastructure sec-
22
tors of the United States economy, and other na-
23
tional security applications.
24
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•S 4130 IS
(2) COMMERCIAL MANUFACTURING.—A facility
1
constructed, expanded, or modernized with an incen-
2
tive provided under paragraph (1) may—
3
(A) be principally oriented toward commer-
4
cial manufacturing; or
5
(B) devote surplus manufacturing capacity
6
to the production of commercial microelec-
7
tronics.
8
(3) RISK MITIGATION REQUIREMENTS.—A facil-
9
ity constructed, expanded, or modernized with an in-
10
centive provided under paragraph (1), or the compo-
11
nents thereof, shall—
12
(A) have the potential to perform fabrica-
13
tion, assembly, package, test, or advanced re-
14
search and development functions for classified
15
and export-controlled microelectronics;
16
(B) include management processes to iden-
17
tify and mitigate supply chain security risks;
18
and
19
(C) be able to produce microelectronics
20
consistent with applicable trusted supply chain
21
and operational security standards established
22
under section 224 of the National Defense Au-
23
thorization Act for Fiscal Year 2020 (Public
24
Law 116–92).
25
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•S 4130 IS
(4) NATIONAL SECURITY REQUIREMENTS.—In
1
the provision of incentives under paragraph (1), the
2
Secretary of Defense and the Director of National
3
Intelligence shall jointly give preference to private
4
sector entities and consortia that—
5
(A) have participated in previous programs
6
and projects of the Department of Defense or
7
the Office of the Director of National Intel-
8
ligence, including—
9
(i) the Trusted Integrated Circuit pro-
10
gram of the Intelligence Advanced Re-
11
search Projects Activity;
12
(ii) trusted and assured microelec-
13
tronics projects, as administered by the
14
Department of Defense; or
15
(iii) the Electronics Resurgence Initia-
16
tive (ERI) program of the Defense Ad-
17
vanced Research Projects Agency;
18
(B) have demonstrated an ongoing com-
19
mitment to performing contracts for the De-
20
partment of Defense and the intelligence com-
21
munity;
22
(C) are approved by the Defense Counter-
23
intelligence and Security Agency or the Office
24
of the Director of National Intelligence as pre-
25
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